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Spin-Allowed Chern-Simons Theory of Fractional Quantum Hall States for Odd and Even Denominator Filling Factors

机译:自旋的Chern-simons分数量子霍尔态理论   奇数和偶数分母填充因子

摘要

By allowing the spin degrees of freedom, we present a generalized spinallowed $U(1)\times U(1)$ Chern-Simons theory of fractional quantum Halleffects for odd and even denominator filling factors in single layers. Thistheory is shown to reproduce all possible odd denominator filling factorscorresponding to spin-unpolarized, partially polarized, and fully polarizedfractional quantum Hall states. Closely following our earlier theory, we derivethe formal expressions of electromagnetic polarization tensors and Hallconductivity for the spin-unpolarized and partially polarized fractionalquantum Hall states. Finally we report the computed spectra of collectiveexcitations for both the even and odd denominator filling factors for whichKohn's theorem is satisfied.
机译:通过允许自旋自由度,我们给出了单层奇偶分母填充因数的分数次量子霍尔效应的广义Spinallowed $ U(1)\ Us(1)$ Chern-Simons理论。该理论表明可以重现与自旋非极化,部分极化和全极化的分数量子霍尔态相对应的所有可能的奇数分母填充因子。紧跟我们先前的理论,我们推导出了自旋非极化和部分极化的分数量子霍尔态的电磁极化张量和霍尔电导率的形式表达式。最后,我们报告了满足科恩定理的偶数和奇数分母填充因子的集体激发谱。

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